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1N5071 21M16 R05L03 BZX55C 80000 DS1238S TC3W01F IRC634
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  Datasheet File OCR Text:
  2830 s. fairview st. santa ana, ca 92704 ph: 714.979.8220 f ax: 714.557.5989 m sc 10 47 .p df updated: november 1998 TD3163 electrical characteristics @ 25 o c features ? ultra thin construction ? low leakage reverse current ? low forward voltage drop ? die metallization is solderable or weldable ? passivated metallization will not degrade in humidity ? space level quality applications ? bypass diode designed for solar cell protection ? extreme t emperature cycling enviornments ? exposed solar array surface mount solar array bypass diode 20 v olts 2.0 amp mechanical outline qci t esting ? bond pull ? t emperature shock ? high t emperature reverse bias ? burn-in ? humidity chip dimensions 0.16 x 0.16 x 0.003 capabilities data sheet s y m b o l c h a r a cter i st i c c o n d i t i o ns m a x u n i ts ir r e v e r s e ( l e a k a g e ) c u rr e n t v r = 2 v d c 5 u a m p s vf fo r w a r d vo l t age i f = 2 . 0 a pu l s e t e s t p w = 300 m s, d / c < 2% 750 m vo l t s bvr b r eak d o w n vo l t age i r = 10 0 ua ( m i n ) 5 0 vo l t s


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